The XanIC 50nm GaAs mHEMT process is the culmination of over 10 years development at the University of Glasgow. It delivers the performance of InP (high frequency, low noise) with the advantages of GaAs such as lower cost, ease of handling and large wafers. The process, currently on 4" wafers, is proven up to frequencies in excess of 400GHz (f_T = 450GHz, f_max = 410GHz)

Key process parameters
Process	50nm GaAs mHEMT
FT (peak)	440 GHz
Fmax (peak)	410 GHz
Beta/Gm	1025 mS/mm
IDS (Gm max)	550 mA/mm
Wafer thickness	50 µm and 100 µm
Airbridged metal	Yes
Backside vias	Yes
Diode type	Gate source